@Article{PirralhoPSBPFRA:2017:TrNePo,
               author = "Pirralho, M. J. P. and Peres, M. L. and Soares, D. A. W. and 
                         Braga, P. C. O. and Pena, F. S. and Fornari, Celso Israel and 
                         Rappl, Paulo Henrique de Oliveira and Abramof, Eduardo",
          affiliation = "{Universidade Federal de Itajub{\'a} (UNIFEI)} and {Universidade 
                         Federal de Itajub{\'a} (UNIFEI)} and {Universidade Federal de 
                         Itajub{\'a} (UNIFEI)} and {Universidade Federal de Itajub{\'a} 
                         (UNIFEI)} and {Universidade Federal de Itajub{\'a} (UNIFEI)} and 
                         {Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)}",
                title = "Transition from negative to positive photoconductivity in p -type 
                         P b1-x e uxTe films",
              journal = "Physical Review B",
                 year = "2017",
               volume = "95",
               number = "7",
                pages = "075202",
                month = "Feb.",
             abstract = "We investigated the photoconductivity effect in p-type Pb1-xEuxTe 
                         films for x=0.01, 0.02, 0.03, 0.05, and 0.06 at T=300K. The 
                         measurements revealed a clear transition from negative to positive 
                         photoconductivity as the Eu content x is increased at room 
                         temperature. This transition is related to the metal-insulator 
                         transition that occurs due to the disorder originated from the 
                         introduction of Eu atoms and it is an Anderson transition. Our 
                         investigation found that, from the potential application point of 
                         view, the sample x=0.06 is more suitable, i.e., it presents an 
                         almost noise-free signal and the higher photoconductivity 
                         amplitude response. The photoconductive amplitude response for the 
                         sample with x=0.06 was investigated further in the temperature 
                         range of 77-300 K and, surprisingly, multiple additional 
                         transitions were observed with amplitudes that reached around 200 
                         times the original value before illumination. We show that this 
                         anomalous behavior is a consequence of the generation and 
                         recombination rates between the bands and the 4f level and a 
                         defect level located inside the band gap.",
                  doi = "10.1103/PhysRevB.95.075202",
                  url = "http://dx.doi.org/10.1103/PhysRevB.95.075202",
                 issn = "1098-0121",
             language = "en",
        urlaccessdate = "27 abr. 2024"
}